mmbt a92-g (pnp) rohs device qw -btr39 page 1 rev : a d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) electrical characteristics (t a=25c, unless otherwise specified) sy m bo l un it collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-of f current emitter cut-of f current collector-emitter saturation voltage base-emitter saturation voltage t ransition frequency s o t - 2 3 1 base 2 emitter collector 3 co nd iti on s v (br)cbo v (br)ceo v (br)ebo i cbo i ebo h fe(2) v ce(sat) v be(sat) f t i c =-100 a, i e =0 i c =-1ma, i b =0 i e =-100 a, i c =0 v cb =-200v , i e =0 v eb =-5v , i c =0 v ce =-10v , ic =-10ma i c =-20ma, i b =-2ma i c =-20ma, i b =-2ma v ce =-20v , i c =-10ma f=30mhz -300 -300 -5 100 50 -0.25 -0.1 200 -0.2 -0.9 mi n ma x v v v a a v v mhz general purpose t ransistor features -high voltage transistor . diagram: symbol parameter v alue unit collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation junction temperature v cbo v ceo v ebo i c p c t j -300 -300 -5 -200 300 150 v v v ma mw c maximum ratings (at t a =25c unless otherwise noted) collector current-pulsed i cm -500 ma thermal resistance, junction to ambient r ja 410 c/w t stg -55 to +150 c storage temperature dc current gain h fe(1) v ce =-10v , i c =-1ma 60 h fe(3) v ce =-10v , i c =-30ma 60 3 1 2 0.1 19(3.00) 0.1 10(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.550) 0.089(2.250) 0.004(0.10) max 0.012(0.30) 0.020(0.50) parameter comchip t echnology co., l td. c o m p a n y r e s e r v e s t h e r i g h t t o i m p r o v e p r o d u c t d e s i g n , f u n c t i o n s a n d r e l i a b i l i t y w i t h o u t n o t i c e .
ra ting and characteristic cur ves (mmbt a92-g) page 2 qw -btr39 general purpose t ransistor rev :a f i g . 5 - i c v b e base - emmiter v oltage , v be (mv) collector current , ic (ma) d c c u r r e n t g a i n , h f e - 0 . 1 - 1 - 1 0 - 1 0 0 0 1 0 0 1 0 0 0 -50 collector current , ic (ma) -0.1 -1 -100 -10 fig.3 - v cesat i c -500 fig.4 - vbesat i c collector current, ic (ma) fig.1- i c v ce c o l l e c t o r c u r r e n t , i c ( m a ) collector-emitter v oltage, v ce (v) 0 3 0 5 0 6 0 7 0 0 8 2 0 2 4 fig.2- h fe i c -10 fig.6 - f t i c 0 - 3 0 0 - 6 0 0 - 1 2 0 0 - 9 0 0 - 0 . 1 - 1 - 1 0 - 1 0 0 c o l l e c t o r c u r r e n t , i c ( m a ) c o l l e c t o r - e m t t e r s a t u r a t i o n v o l t a g e , ( m v ) v c e s a t b a s e - e m i t t e r s a t u r a t i o n v o l t a g e , , v b e s a t ( m v ) 4 0 2 0 1 0 4 1 2 1 6 v ce =10v common emitter t a = 2 5 c t a = 1 0 0 c -100 -0.1 -1 100 10 300 -10 collector current , i c (ma) t r a n s i t i o n f r e q u e n c y , f t ( m h z ) -100 -0.1 -1 -600 -300 -900 -10 - 5 0 0 u a - 4 5 0 u a - 3 5 0 u a - 3 0 0 u a - 2 5 0 u a i b = - 5 0 u a - 1 0 0 u a -15 0 ua - 2 0 0 u a - 5 0 0 u a - 4 5 0 u a c o m m o n e m i t t e r t a = 2 5 c - 4 5 0 u a - 3 0 0 common emitter v ce =10v t a=100c t a= 25c ?=10 ?=10 t a=25c t a= 100c v ce =-20v common emitter t a =25c comchip t echnology co., l td.
ra ting and characteristic cur ves ( ) mmbt a92-g general purpose t ransistor fig. 7- cob/cib v cb /v eb c a p a c i t a n c e , c ( p f ) fig . 8- p c t a ambient t emperature , t a (c) c o l l e c t o r p o w e r d i s s i p a t i o n , p c ( m w ) 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 1 0 0 2 0 0 3 0 0 4 0 0 - 0 . 1 - 1 - 1 0 - 2 0 0 1 0 1 0 0 f=1mh z i e =0/i c =0 t a =25c cib cob reverse v oltge , v ( v ) page 3 qw -btr39 rev :a comchip t echnology co., l td.
reel t aping specification b c d d d 2 d 1 s o t - 2 3 s y m b o l a ( m m ) ( i n c h ) 2 . 1 4 2 0 . 0 3 9 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 5 4 . 4 0 1 . 0 0 1 3 . 0 0 1 . 0 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 7 8 2 . 0 0 0 . 0 5 9 0 . 0 0 4 7 . 0 0 8 0 . 0 7 9 0 . 5 1 2 0 . 0 3 9 s y m b o l ( m m ) ( i n c h ) 0 . 0 . 0 0 4 1 5 7 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 s o t - 2 3 3 . 1 5 0 . 1 0 0 . 1 2 4 0 . 0 0 4 2 . 7 7 0 . 1 0 0 . 1 0 9 0 . 0 0 4 1 . 2 2 0 . 1 0 0 . 0 4 8 0 . 0 0 4 9 . 5 0 1 . 0 0 0 . 3 7 4 0 . 0 3 9 8 . 0 0 0 . 3 0 / + C 0 . 1 0 0 . 3 1 5 0 . 0 1 2 / + C 0 . 0 0 4 d f e b p 1 p 0 general purpose t ransistor page 4 qw -btr39 rev :a comchip t echnology co., l td.
suggested p ad layout size (inch) 0.031 (mm) 0.80 1.90 2.02 0.075 0.080 sot -23 2.82 0.1 1 1 standard packaging case t ype qty per reel (pcs) 3,000 sot -23 reel size (inch) 7 a b c d part number mmbt a92-g marking code 2d marking code 2d 3 1 2 a c b d general purpose t ransistor page 5 qw -btr39 rev :a comchip t echnology co., l td.
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